Monday October 31
18:00-20:00 // Opening Reception: Pairings Restaurant in the Boston Park Plaza Hotel
Tuesday November 1
7:00-8:30 // Registration & Continental Breakfast (provided)
Welcome
8:15-8:30 // Tonio Buonassisi (MIT, US)
Crystal Growth Fundamentals
8:30-9:00 // Gaute Stokkan (NTNU, NO): Dislocations in multicrystalline silicon
9:00-9:30 // Thierry Duffar (SIMaP-EPM, FR): Review of simulation of grain formation during silicon solidification
9:30-9:45 // Maulid Kivambe (NTNU, NO): Investigation of highly dislocated stacking fault regions in multicrystalline silicon
9:45-10:00 //
Marcus Oswald (Fraunhofer CSP, DE): Modeling of multicrystalline silicon wafers considering microstructural properties
10:00-10:15 // Break (coffee, tea & snacks)
Advanced Ingot Crystallization: Defect Control
10:15-10:45 // Koichi Kakimoto (Kyushu University, JP): High-purity multicrystalline silicon production in unidirectional solidification furnace
10:45-11:15 // Frank Kiessling (IKZ, DE): Influence of travelling magnetic fields on the directional solidification process of solar-grade mc-Si
11:15-11:45 // Peter Rudolph (IKZ, DE): The use of KRISTMAG® heater-magnet concept to crystallize industry-scale mc-Si ingots
11:45-12:05 // Ronny Lantzsch (Q-Cells, DE): Structural defects and solar cell characteristics of multicrystalline silicon with high oxygen content
12:05-14:05 // Lunch (Smith & Wollensky's at former Boston Armory, provided)
Advanced Ingot Crystallization: Seeded Growth
14:05-14:25 // Kazuo Nakajima (Kyoto Univ., JP): Arrangement of dendrite crystals grown along the bottom of Si ingots by controlling thermal conductivity under crucibles
14:25-14:55 // Noritaka Usami (Tohoku Univ., JP): Toward realization of high-quality multicrystalline Si ingot
14:55-15:10 // Ingvild Brynjulfsen (NTNU, NO): Nucleation and initial growth of silicon
15:10-15:20 // Break
15:20-15:40 // Chung-Wen Lan (National Taiwan Univ., TW): Grain control in directional solidification of photovoltaic silicon
15:40-15:55 // Mari Juel (Sintef, NO): Comparison of mc-Si ingots with different average grain size
15:55-16:10 // Ismael Guerrero (DC Wafers, ES): Mono-crystalline silicon wafers manufactured by casting methods: Optoelectronic, strucutral and solar cell study
16:10-16:25 // Anis Jouini (CEA-INES, FR): Mono-like ingots: Seed growth for better crystal quality and high solar cell efficiency
16:25-16:40 // Xin Gu (Zhejiang University, CN): Influence of dislocations on the performance of cast quasi-single crystalline silicon solar cells
Poster Session
Josu Barredo (Polytechnical University of Madrid UPM, ES): Analysis of the mechanical properties of mc-Si and mono-Si wafers manufactured by casting methods
Simona Binetti (University of Milano, IT): Increasing the efficiency of Si-based solar cell by solar spectrum harvesting using Eu organic complexes as down-shifters
Sergio Castellanos (MIT, US): Application of infrared birefringence imaging to measure residual stress and defect distributions in ingot multicrystalline slabs
Hyunjoo Choi (MIT, US): Dislocation annihilation in multicrystalline silicon
Andresa Côrtes (Campinas State University UNICAMP, BR): Study of impurities concentration on solar cells manufactured with upgrade metallurgical grade silicon
Julien Degoulange (Apollon Solar, FR): Optimization of nucleation conditions for multi crystalline Silicon ingots
Fabrizio Dughiero (University of Padova, IT): A new induction DSS furnace for the production of multi-crystalline silicon ingots
Marco Ernst (ISFH, DE): Experimental and theoretical investigation of the impact of local openings in the passivating layer on the effective
carrier lifetime of macroporous silicon layers
David Fenning (MIT, US): Advancements in synchrotron-based characterization of metals in silicon
Benjamin Gallien (INP-Grenoble, FR): Detachment of Si ingots from crucibles and related stresses
Benjamin Gallien (INP-Grenoble, FR): Dislocation density in Si ingots as function of solidification parameters
Zhancheng Guo (Univ. of Science & Technology Beijing, CN): Purification of MG-Si to SoG-Si by combined process of pyrometallurgy with hydrometallurgy
Fa-Lin He (Xiamen University, CN): Study on the removal of metals by acid leaching with CaO-added metallurgical silicon
Jasmin Hofstetter (MIT, US): Toward the tailoring of P diffusion gettering to as-grown silicon material properties
Yu Hu (NTNU, NO): Trapping in n-type Cz silicon
Dachuan Jiang (Dailan University of Technology, CN): The removal of phosphorus in molten silicon by electron beam powder melting
Daniel Kropman (Tallinn University of Technology, EE): Stress relaxation mechanism by strain in the Si-SiO2 system and its modification by laser irradiation
Yu-Ting Lin (Harvard University, US): Femtosecond laser doping of silicon for intermediate band solar cells
Jeanette Lindroos (Aalto University, FI): Light-induced degradation in gallium-doped silicon
Zaidat Kader (INP-Grenoble, FR): Columnar and equiaxed grain structure in multi-crystalline silicon
Francisco Machuca (MKS Instruments, US): GLM 2000 Steady state lifetime monitor
Chiara Modanese (NTNU, NO): Temperature dependent Hall-effect measurements of multicrystalline compensated solar grade silicon
Ashley Morishige (MIT, US): Co-optimizing the phosphorous diffusion time-temperature profile for gettering and throughput
Tine Nærland (NTNU, NO): Electronic activity of grain boundaries studied by local light induced defect monitoring using photoluminescence imaging
Jan Hendrik Petermann (ISFH, DE): 19%-efficient thin-film silicon solar cells from layer transfer using porous silicon: A loss analysis by 3-dimensional simulations
Douglas Powell (MIT, US): Crystalline silicon photovoltaics: A cost analysis framework for assessing technology pathways for reaching baseload electricity costs
Hariharsudan S. Radhakrishnan (IMEC, BE): Study of doping-dependent segregation of metals to assess the potential of thin-film epitaxial
silicon solar cells on low-purity substrates
Scott Reitsma (Evergreen Solar, US): Mechanical strength of String Ribbon™ wafers in high yield PV production
Fatoumata Santara (INP-Grenoble, FR): Effect of the magnetic field on the improvement of the segregation during the crystallization of silicon
Stephan Schönfelder (Fraunhofer IWMH, DE): Statistical modeling of holes regarding mechanical strength of silicon wafers
Shuang Shi (Dalian University of Technology, CN): Investigation of temperature distribution in molten silicon during electron beam melting process
Christine Simmons (MIT, US): Thermal stability of infrared-absorbing hyperdoped silicon
Peter Simon (Freiburg University, DE): Gas transport over a silicon melt in directional solidification
Larry Wang (EAG Labs, US): SIMS simultaneous measurement of B, P, C and O in solar wafers and solar grade Si feedstock under single analysis condition
Chris Yang (Georgia Tech, US): Investigation on wafer-level residual stress and mechanical properties of mc-Si wafers
Xinbo Yang (Tohoku University, JP): Dependence of Si faceted dendrite growth orientation on twin spacing and undercooling
Wednesday November 2
7:00-8:30 // Continental Breakfast (provided)
Pushing the Limits of Wire Sawing
8:00-8:20 // Daniel Meißner (PV Silicon, DE): Manufacturing of thin silicon wafers with thin wires
8:20-8:40 // Bernd Weber (Fraunhofer ISE, DE): Investigations on the wire wear due to material removal mechanisms in the wire sawing process
Discussion: Toward widespread adoption of seeded growth & thin wafering
8:40-9:40 // Nathan Stoddard, leader
9:40-10:00 // Break (coffee, tea & snacks)
Kerfless Wafers: Melt Growth
10:00-10:20 // André Augusto (Lisbon Univ., PT): Silicon ribbon growth based on the silicon dust substrate process, development overview and state-of-the-art
10:20-10:40 // Ivo Costa (Lisbon Univ., PT): Electrically generated molten capillary for crystallization of silicon sheet
10:40-10:55 // Akram Boukai (Univ. Michigan, US): Thin UMG-Si solar cells on flexible substrates
10:55-11:15 // Charles Huguet (CEA-INES, FR): Direct mc-Si wafer molding: Reusable graphite substrate and high purity polymer-derivedceramic based releasing coating
11:15-11:25 // Break
Kerfless Wafers: Exfoliation from Ingots
11:25-11:45 // Kris Van Nieuwenhuysen (IMEC, BE): Epitaxial foils by porous-silicon-based layer transfer process
11:45-12:05 // Stephen Bedell (IBM Research Labs, US): Kerf-less removal of silicon layers by controlled spalling
12:05-12:25 // Dharmesh Jawarani (AstroWatt, US): A low-cost kerfless exfoliation technology for 25 µm thin monocrystalline silicon solar cells
12:25-13:40 // Lunch (provided)
Kerfless Wafers: Growth from Gas
13:40-14:00 // K.V. Ravi (Crystal Solar, US): Poly-less, ingot-less, kerf-less production of very thin (<50 µm) single crystal silicon wafers
14:00-14:20 // Stefan Reber (Fraunhofer ISE, DE): High-throughput silicon CVD for c-Si thin-film solar cells
14:20-14:40 // Howard Branz (NREL, US): Film crystal silicon photovoltaics by hot-wire chemical vapor deposition epitaxy on crystalline seed layers
Discussion: Kerfless wafers: Déjà vu all over again?
14:40-15:40 // Jim Rand, leader
15:40-16:00 // Break (coffee, tea & snacks)
Novel Concepts
16:00-16:30 // Gene Fitzgerald (MIT, US): Monolithically integrated thin film III-V/Si solar cells
16:30-16:45 // Renee Sher (Harvard Univ., US): IR absorption of fs-laser doped silicon: Effect of dopant types and thermal treatments
16:45-18:00 // Talk, Rest & Refresh
Conference Dinner @ the Boston Museum of Science
18:00 // Busses depart conference hotel (Boston Park Plaza)
18:30 // Upstairs: Open bar. / Downstairs: Self-guided tour of exhibits: Pompeii, New England Wildlife, the Human Body
19:30 // Dinner
21:00 // Announcement of Ulrich Gösele Young Scientist Award
21:40 // Busses depart for conference hotel
Thursday November 3
7:00-8:30 // Continental Breakfast (provided)
Advanced Characterization
8:00-8:30 // Michio Tajima (JAXA, JP): Toward the quantification of donor, acceptor, and light-element impurities in solar-grade Si by photoluminescence
8:30-8:45 // James Swirhun (Sinton Instruments, US): Eddy-current lifetime measurements of thick silicon wafers
8:45-9:00 // Christian Reimann (Fraunhofer IISB, DE): A new characterization tool for the investigation of the crystal structure of multicrystalline silicon
9:00-9:15 // Helge Riemann (IKZ, DE): Evaluation of crystallization interface and grain structure in sc and mc bulk silicon by lateral photovoltage scanning (LPS) and scanning photoluminescence (SPL) techniques
9:15-9:30 // Harley Johnson (UIUC, US): Infrared photoelasticity and photoluminescence inspection of stress and defects in mono-crystalline silicon photovoltaic substrates
9:30-9:50 // Break (tea, coffee & snacks)
Crystal Defects and Defect Engineering during Solar Cell Fabrication
9:50-10:05 // Paula Bronsveld (ECN, NL): n-type Cz ingot properties and their relation to high-efficiency solar cells
10:05-10:20 // Torunn Ervik (NTNU, NO): High temperature annealing of bent multicrystalline silicon rods
10:20-10:35 // Yacine Boulfrad (NTNU, NO): Enhancement of the performance of as-grown mc-Si wafers from the deteriorated area of ingots by internal gettering
Cost-Effective Silicon Feedstock
10:35-10:55 // Anne-Karin Søiland (Elkem, NO): Investigation of Cz-monocrystals, p- and n-type, produced from 50/50 mix of Elkem Solar Silicon® and polysilicon
10:55-11:05 // Break
11:05-11:35 // Gianluca Coletti (ECN, NL): Sensitivity of crystalline silicon solar cells to metal impurities
11:35-11:55 // Stephan Riepe (Fraunhofer ISE, DE): Doping engineering in crystallization of upgraded metallurgical grade silicon (UMG-Si) for solar cells
11:55-12:10 // Chao Chen (Xiamen University, CN): Exploration of purification technology by laser melting recrystallization on multi-crystalline silicon wafer
12:10-12:25 // Song-Sheng Zheng (Xiamen University, CN): The optimum parameters of phosphorus removal from silicon by induction vacuum refining
12:25-12:40 // Jan Hendrick Petermann (ISFH, DE): 19%-efficient and 43μm-thick crystalline Si solar cell from layer transfer using porous silicon
Workshop Wrap-Up
12:40-12:50 // Tonio Buonassisi (MIT, US) and Anis Jouini (CEA-INES, FR)
12:50-13:30 // Lunch (provided)
MIT Lab Tours
14:00 // Upon request