Impurity-to-Efficiency (I2E) Simulator for Sentaurus TCAD

The Impurity-to-Efficiency simulation tool predicts the impact of as-grown iron impurities and processing conditions on crystalline silicon solar cell performance.

The model scripts provided here add the existing models to the state-of-the art Sentaurus TCAD simulation suite, maximizing the utility of the models.

The I2E Simulator can be incorporated in 1D, 2D, and 3D coupled process and device simulations.

Adding I2E to Sentaurus TCAD using the Alagator Scripting Language allows the photovoltaics researchers and industry to leverage Sentaurus’ built-in parameters, models, and numerical solvers.

These scripts, which were written in collaboration with our colleagues at Synopsys, Inc., are designed to be modular, so others can adapt these scripts to specify their own model parameters (e.g. different impurities or dopants).

 

File Downloads
Scripts I2E SentaurusTCAD
User Manual User Manual

 

References

 

[1]
A.E. Morishige, H. Wagner, J. Hofstetter, I. Avci, C. del Cañizo, T. Buonassisi, “Combined Effect of Heterogeneous Lifetime and Gettering on Solar Cell Performance,” Energy Procedia 77, 119-128 (2015).
[2]
J. Hofstetter, et al. “Impurity-to-Efficiency simulator: predictive simulation of silicon solar cell performance based on iron content and distribution,” Prog. Photovolt: Res. Appl. 19, 487-497 (2011).

 

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