Achieving infrared photoresponse using silicon has been an outstanding challenge for the semiconductor community, with potential applications for PV and photodetector devices. Recent advances in laser processing of materials has enabled laser-recrystallized single-crystalline silicon doped beyond the solid-solubility limit (up to 10^20 cm^-3), resulting in materials with novel optoelectronic properties.
Innovations: Working as part of a collaboration including Harvard, Benét, RPI, and MIT groups, we have applied our knowledge of defects in silicon to study hyperdoped silicon. The PVLab’s principal contributions include: (i) identifying property-structure-process relationships in hyperdoped silicon, including insights into dopant chemical state; (ii) evaluating the PV potential of candidate intermediate-band solar cell materials; and (iii) demonstrating sub-bandgap photoresponse in silicon.
 B.K. Newman et al., in press (2013)
 J.T. Sullivan et al., Journal of Applied Physics 114, 103701 (2013)
 J.P. Mailoa et al., submitted (2013)