Publications

Determining interface properties limiting open-circuit voltage in heterojunction solar cells

R.E. Brandt, N.M. Mangan, J.V. Li, Y.S. Lee, and T. Buonassisi
Journal of Applied Physics 121, 185301 (2017)

Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material

R. Jaramillo, M.-J. Sher, B.K. Ofori-Okai, V. Steinmann, C. Yang, K. Hartman, K.A. Nelson, A.M. Lindenberg, R.G. Gordon, and T. Buonassisi
Journal of Applied Physics 119, 035101 (2016)

Dopant activation in Sn-doped Ga₂O₃ investigated by X-ray absorption spectroscopy

S.C. Siah, R.E. Brandt, K. Lim, L.T. Schelhas, R. Jaramillo, M.D. Heinemann, D. Chua, J. Wright, J.D. Perkins, C.U. Segre, R.G. Gordon, M.F. Toney, and T. Buonassisi
Applied Physics Letters 107, 252103 (2015)

Open-circuit voltage deficit, radiative sub-bandgap states, and prospects in quantum dot solar cells

C.-H.M. Chuang, A. Maurano, R.E. Brandt, G.W. Hwang, J. Jean, T. Buonassisi, V. Bulovic, and M.G. Bawendi
Nano Letters 15, 3286–3294 (2015)

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

J.P. Mailoa, C.D. Bailie, E.C. Johlin, E.T. Hoke, A.J. Akey, W.H. Nguyen, M.D. McGehee, and T. Buonassisi
Applied Physics Letters 106, 121105 (2015)
Supporting online material available: ftp://ftp.aip.org/epaps/appl_phys_lett/E-APPLAB-106-043510

Maintaining surface-phase purity is key to efficient open air fabricated cuprous oxide solar cells

R.L.Z. Hoye, R.E. Brandt, Y. Ievskaya, S. Heffernan, K.P. Musselman, T. Buonassisi, and J.L. MacManus-Driscoll
APL Materials 3, 020901 (2015)

Band offsets of n-type electron-selective contacts on cuprous oxide (Cu₂O) for photovoltaics

R.E. Brandt, M. Young, H.H. Park, A. Dameron, D. Chua, Y.S. Lee, G. Teeter, R.G. Gordon, and T. Buonassisi
Applied Physics Letters 105, 263901 (2014)

3.88% efficient tin sulfide solar cells using congruent thermal evaporation

V. Steinmann, R. Jaramillo, K. Hartman, R. Chakraborty, R.E. Brandt, J.R. Poindexter, Y.S. Lee, L. Sun, A. Polizzotti, H.H. Park, R.G. Gordon, and T. Buonassisi
Advanced Materials 26, 7488 (2014)

X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

S.C. Siah, S.W. Lee, Y.S. Lee, J. Heo, T. Shibata, C.U. Segre, R.G. Gordon, and T. Buonassisi
Applied Physics Letters 104, 242113 (2014)

Variations of ionization potential and electron affinity as a function of surface orientation: The case of orthorhombic SnS

V. Stevanovic, K. Hartman, R. Jaramillo, S. Ramanathan, T. Buonassisi, and P. Graf
Applied Physics Letters 104, 211603 (2014)

Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells

Y.S. Lee, D. Chua, R.E. Brandt, S.C. Siah, J.V. Li, J.P. Mailoa, S.W. Lee, R.G. Gordon, and T. Buonassisi
Advanced Materials 26, 4704–4710 (2014)

Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells

H.H. Park, L. Sun, K. Hartman, R. Chakraborty, P. Sinsermsuksakul, T. Buonassisi, and R.G. Gordon
Progress in Photovoltaics DOI 10.1002/pip.2504 (2014)

Improved Cu₂O-based solar cells using atomic layer deposition to control the Cu oxidation state at the p–n junction

S.W. Lee, Y.S. Lee, J. Heo, S.C. Siah, D. Chua, R.E. Brandt, S.B. Kim, J.P. Mailoa, T. Buonassisi, and R.G. Gordon
Advanced Energy Materials 4, 1301916 (2014)

Identifying and comparing efficiency-loss mechanisms in Earth-abundant thin-film solar cells

R.E. Brandt, M. Lloyd, Y.S. Lee, S.C. Siah, and T. Buonassisi
Proc. 39th IEEE Photovoltaic Specialists Conference, Tampa, FL, USA (2013)

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Y.S. Lee, J. Heo, S.C. Siah, J.P. Mailoa, R.E. Brandt, S.B. Kim, R.G. Gordon, and T. Buonassisi
Energy & Environmental Science 6, 2112–2118 (2013)

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

P. Sinsermsuksakul, K. Hartman, S.B. Kim, J. Heo, L. Sun, H.H. Park, R. Chakraborty, T. Buonassisi, and R.G. Gordon
Applied Physics Letters 102, 053901 (2013)

Organic vapor passivation of silicon at room temperature

R. Yang, T. Buonassisi, and K.K. Gleason
Advanced Materials 25, 2078–2083 (2013)
Featured in MIT News

Interfaces between water splitting catalysts and buried silicon junctions

C.R. Cox, M.T. Winkler, J.J.H. Pijpers, T. Buonassisi, and D.G. Nocera
Energy & Environmental Science 6, 532-538 (2012)

Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu₂O) thin-films

S.C. Siah, Y.S. Lee, Y. Segal, and T. Buonassisi
Journal of Applied Physics 112, 084508 (2012)