Publications

Highly tensile-strained Ge/InAlAs nanocomposites

D. Jung, J. Faucher, S. Mukherjee, A.J. Akey, D.J. Ironside, M. Cabral, X. Sang, J. Lebeau, S.R. Bank, T. Buonassisi, O. Moutanabbir, and M.L. Lee
Nature Communications 8, 14204 (2017)

Using Atom-Probe Tomography to Understand ZnO∶Al/SiO2/Si Schottky Diodes

R. Jaramillo, A. Youssef, A.J. Akey, F. Schoofs, S. Ramanathan, and T. Buonassisi
Physical Review Applied 6, 034016 (2016)

 

 

The effect of embedded nanopillars on the built-in electric field of amorphous silicon p–i–n devices

T.R. Kirkpatrick, C.B. Simmons, A.J. Akey, N. Tabet, and T. Buonassisi
Journal of Applied Physics 119, 194501 (2016)

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

D. Hutchinson, J. Mathews, J.T. Sullivan, A.J. Akey, M.J. Aziz, T. Buonassisi, P.D. Persans, and J.M. Warrender
AIP Advances 6, 055307 (2016)

Methylammonium bismuth iodide as a lead-free, stable hybrid organic-inorganic solar absorber

R.L.Z. Hoye, R.E. Brandt, A. Osherov, V. Stevanovic, S.D. Stranks, M.W.B. Wilson, H. Kim, A.J. Akey, J.D. Perkins, R.C. Kurchin, J.R. Poindexter, E.N. Wang, M.G. Bawendi, V. Bulović, and T. Buonassisi
Chemistry: A European Journal 22, 2605–2610 (2015)

Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

K. Mukherjee, A.G. Norman, A.J. Akey, T. Buonassisi, and E.A. Fitzgerald
Journal of Applied Physics 118, 115306 (2015)

Single-phase filamentary cellular breakdown via laser-induced solute segregation

A.J. Akey, D. Recht, J.S. Williams, M.J. Aziz, and T. Buonassisi
Advanced Functional Materials 25, 4642–4649 (2015)

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

J.P. Mailoa, C.D. Bailie, E.C. Johlin, E.T. Hoke, A.J. Akey, W.H. Nguyen, M.D. McGehee, and T. Buonassisi
Applied Physics Letters 106, 121105 (2015)

Supporting online material available: ftp://ftp.aip.org/epaps/appl_phys_lett/E-APPLAB-106-043510

Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

M.-J. Sher, C.B. Simmons, J.J. Krich, A.J. Akey, M.T. Winkler, D. Recht, T. Buonassisi, M.J. Aziz, and A.M. Lindenberg
Applied Physics Letters 105, 053905 (2014)

Enhancing the infrared photoresponse of silicon by controlling the Fermi level location within an impurity band

C.B. Simmons, A.J. Akey, J.P. Mailoa, D. Recht, M.J. Aziz, and T. Buonassisi
Advanced Functional Materials 24, 2852–2858 (2014)

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

J.P. Mailoa, A.J. Akey, C.B. Simmons, D. Hutchinson, J. Mathews, J.T. Sullivan, D. Recht, M.T. Winkler, J.S. Williams, J.M. Warrender, P.D. Persans, M.J. Aziz, and T. Buonassisi
Nature Communications 5, 3011 (2014)

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

C.B. Simmons, A.J. Akey, J.J. Krich, J.T. Sullivan, D. Recht, M.J. Aziz, and T. Buonassisi
Journal of Applied Physics 114, 243514 (2013)

Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

J.T. Sullivan, C.B. Simmons, J.J. Krich, A.J. Akey, D. Recht, M.J. Aziz, and T. Buonassisi
Journal of Applied Physics 114, 103701 (2013)