Publications

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

D. Hutchinson, J. Mathews, J.T. Sullivan, A.J. Akey, M.J. Aziz, T. Buonassisi, P.D. Persans, and J.M. Warrender
AIP Advances 6, 055307 (2016)

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

J.P. Mailoa, A.J. Akey, C.B. Simmons, D. Hutchinson, J. Mathews, J.T. Sullivan, D. Recht, M.T. Winkler, J.S. Williams, J.M. Warrender, P.D. Persans, M.J. Aziz, and T. Buonassisi
Nature Communications 5, 3011 (2014)

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

D. Recht, M.J. Smith, S. Charnvanichborikarn, J.T. Sullivan, M.T. Winkler, J. Mathews, J.M. Warrender, T. Buonassisi, J.S. Williams, S. Gradečak, and M.J. Aziz
Journal of Applied Physics 114, 124903 (2013)

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

A.J. Said, D. Recht, J.T. Sullivan, J.M. Warrender, T. Buonassisi, P.D. Persans, and M.J. Aziz
Applied Physics Letters 99, 073503 (2011)