Publications

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

D. Hutchinson, J. Mathews, J.T. Sullivan, A.J. Akey, M.J. Aziz, T. Buonassisi, P.D. Persans, and J.M. Warrender
AIP Advances 6, 055307 (2016)

Single-phase filamentary cellular breakdown via laser-induced solute segregation

A.J. Akey, D. Recht, J.S. Williams, M.J. Aziz, and T. Buonassisi
Advanced Functional Materials 25, 4642–4649 (2015)

Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

M.-J. Sher, C.B. Simmons, J.J. Krich, A.J. Akey, M.T. Winkler, D. Recht, T. Buonassisi, M.J. Aziz, and A.M. Lindenberg
Applied Physics Letters 105, 053905 (2014)

Enhancing the infrared photoresponse of silicon by controlling the Fermi level location within an impurity band

C.B. Simmons, A.J. Akey, J.P. Mailoa, D. Recht, M.J. Aziz, and T. Buonassisi
Advanced Functional Materials 24, 2852–2858 (2014)

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

J.P. Mailoa, A.J. Akey, C.B. Simmons, D. Hutchinson, J. Mathews, J.T. Sullivan, D. Recht, M.T. Winkler, J.S. Williams, J.M. Warrender, P.D. Persans, M.J. Aziz, and T. Buonassisi
Nature Communications 5, 3011 (2014)

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

C.B. Simmons, A.J. Akey, J.J. Krich, J.T. Sullivan, D. Recht, M.J. Aziz, and T. Buonassisi
Journal of Applied Physics 114, 243514 (2013)

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

D. Recht, M.J. Smith, S. Charnvanichborikarn, J.T. Sullivan, M.T. Winkler, J. Mathews, J.M. Warrender, T. Buonassisi, J.S. Williams, S. Gradečak, and M.J. Aziz
Journal of Applied Physics 114, 124903 (2013)

Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

J.T. Sullivan, C.B. Simmons, J.J. Krich, A.J. Akey, D. Recht, M.J. Aziz, and T. Buonassisi
Journal of Applied Physics 114, 103701 (2013)

Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting

D. Recht, J.T. Sullivan, R. Reedy, T. Buonassisi, and M.J. Aziz
Applied Physics Letters 100, 112112 (2012)

Insulator-to-metal transition in selenium-hyperdoped silicon: Observation and origin

E. Ertekin, M.T. Winkler, D. Recht, A.J. Said, M.J. Aziz, T. Buonassisi, and J.C. Grossman
Physical Review Letters 108, 026401 (2012)

Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur

J.T. Sullivan, R.G. Wilks, M.T. Winkler, L. Weinhardt, D. Recht, A.J. Said, B.K. Newman, Y. Zhang, S. Krause, W.L. Yang, C. Heske, M.J. Aziz, M. Blum, M. Bär, and T. Buonassisi
Applied Physics Letters 99, 142102 (2011)

SnS thin-films by RF sputtering at room temperature

K. Hartman, J.L. Johnson, M.I. Bertoni, D. Recht, M.J. Aziz, M.A. Scarpulla, and T. Buonassisi
Thin Solid Films 519, 7421-7424 (2011)

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

A.J. Said, D. Recht, J.T. Sullivan, J.M. Warrender, T. Buonassisi, P.D. Persans, and M.J. Aziz
Applied Physics Letters 99, 073503 (2011)