17
Publications
S. Castellanos
16
Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime
M.M. Kivambe, D.M. Powell, S. Castellanos, M.A. Jensen, A.E. Morishige, B. Lai, R. Hao, T.S. Ravi, and T. BuonassisiJournal Of Crystal Growth 483, 57-64 (2018)
15
Exceeding 3 ms minority carrier lifetime in n-type non-contact crucible silicon
S. Castellanos, M.M. Kivambe, M.A. Jensen, D.M. Powell, K. Nakajima, K. Morishita, R. Murai, and T. BuonassisiEnergy Procedia 92, 779–784 (2016)
14
High-performance and traditional multicrystalline silicon: Comparing gettering responses and lifetime-limiting defects
S. Castellanos, K.E. Ekstrøm, A. Autruffe, M.A. Jensen, A.E. Morishige, J. Hofstetter, P.X.T. Yen, B. Lai, G. Stokkan, C. del Cañizo, and T. BuonassisiIEEE Journal of Photovoltaics 6, 632-640 (2016)
13
An insight into dislocation density reduction in multicrystalline silicon
S. Woo, M.I. Bertoni, K. Choi, S. Nam, S. Castellanos, D.M. Powell, T. Buonassisi, and H.J. ChoiSolar Energy Materials and Solar Cells 155, 88–100 (2016)
12
Exceptional gettering response of epitaxially grown kerfless silicon
D.M. Powell, V.P. Markevich, J. Hofstetter, M.A. Jensen, A.E. Morishige, S. Castellanos, B. Lai, A.R. Peaker, and T. BuonassisiJournal of Applied Physics 119, 065101 (2016)
11
Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells
J. Hofstetter, C. del Cañizo, H. Wagner, S. Castellanos, and T. BuonassisiProgress in Photovoltaics 24, 122–132 (2016)
10
Dislocation density reduction limited by inclusions in kerfless high-performance multicrystalline silicon
S. Castellanos, and T. BuonassisiPhysica Status Solidi Rapid Research Letters 9, 503–506 (2015)
9
Dislocation density reduction in multicrystalline silicon via cyclic annealing
K. Choi, S. Castellanos, D.M. Powell, T. Buonassisi, and H.J. ChoiPhysica Status Solidi (a) in press (2015)
8
Dislocation density reduction in multicrystalline silicon via cyclic annealing
K. Choi, S. Castellanos, D.M. Powell, T. Buonassisi, and H.J. ChoiPhysica Status Solidi (a) 212, 2315–2321 (2015)
7
The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon
M.M. Kivambe, G. Stokkan, T. Ervik, S. Castellanos, J. Hofstetter, and T. BuonassisiSolid State Phenomena 205–206, 71–76 (2013)
6
Dislocation density reduction during impurity gettering in multicrystalline silicon
H.J. Choi, M.I. Bertoni, J. Hofstetter, D.P. Fenning, D.M. Powell, S. Castellanos, and T. BuonassisiIEEE Journal of Photovoltaics 3, 189-198 (2013)
5
Stress-enhanced dislocation density reduction in multicrystalline silicon
M.I. Bertoni, D.M. Powell, M.L. Vogl, S. Castellanos, A.E. Fecych, and T. BuonassisiPhysica Status Solidi Rapid Research Letters 5, 28–30 (2010)
4
Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon
V. Ganapati, S. Schoenfelder, S. Castellanos, S. Oener, R. Koepge, A. Sampson, M.A. Marcus, B. Lai, H. Morhenn, G. Hahn, J. Bagdahn, and T. BuonassisiJournal of Applied Physics 108, 063528 (2010)
3
Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon
V. Ganapati, S. Schoenfelder, S. Castellanos, S. Oener, and T. BuonassisiProc. 35th IEEE Photovoltaic Specialists Conference, Honolulu, HI (2010)
See also: Journal Article
2
Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon
S. Castellanos, M.I. Bertoni, M.L. Vogl, A. Fecych, and T. BuonassisiProc. 35th IEEE Photovoltaic Specialists Conference, Honolulu, HI, USA (2010)
See also: Journal Article
1
Quantitative stress measurements of bulk microdefects in multicrystalline silicon
S. Schoenfelder, A. Sampson, V. Ganapati, R. Koepge, S. Castellanos, S. Oener, and T. BuonassisiProc. 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany; pp.977-980. (2009)